v50100pw www.vishay.com vishay general semiconductor revision: 20-dec-13 1 document number: 89181 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dual high-voltage trench mos barrier schottky rectifier ultra low v f = 0.39 v at i f = 5 a features ? trench mos schottky technology ? low forward voltage drop, low power losses ? high efficiency operation ? solder dip 275 c max. 10 s, per jesd 22-b106 ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 typical applications for use in high frequency converters, switching power supplies, freewheeling diod es, or-ing diode, dc/dc converters and reverse battery protection. mechanical data case: to-3pw ? molding compound meets ul 94 v-0 flammability rating base p/n-m3 - halogen-free, rohs-compliant, and commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 ? m3 suffix meets jesd 201 class 1a whisker test polarity: as marked mounting torque: 10 in-lbs maximum ? ? primary characteristics i f(av) 2 x 25 a v rrm 100 v i fsm 300 a e as at l = 100 mh 280 mj v f at i f = 25 a 0.66 v t j max. 150 c package to-3pw diode variations dual common cathode to-3pw tmbs ? pin 2 case pin 1 pin 3 maximum ratings (t a = 25 c unless otherwise noted) parameter symbol v50100pw unit maximum repetitive pe ak reverse voltage v rrm 100 v maximum average forward rectified current (fig. 1) per device i f(av) 50 a per diode 25 peak forward surge current 8. 3 ms single ha lf sine-wave ? superimposed on ra ted load per diode i fsm 300 a non-repetitive avalanche energy at t j = 25 c, l = 100 mh per diode e as 280 mj peak repetitive reverse current at t p = 2 s, 1 khz, ? t j = 38 c 2 c per diode i rrm 1.0 a voltage rate of change (rated v r ) dv/dt 10 000 v/s operating junction and storage temperature range t j , t stg -40 to +150 c
v50100pw www.vishay.com vishay general semiconductor revision: 20-dec-13 2 document number: 89181 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes (1) pulse test: 300 s pulse width, 1 % duty cycle (2) pulse test: pulse width ? 40 ms ? ? ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - forward current derating curve fig. 2 - forward power loss characteristics per diode electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol typ. max. unit breakdown voltage i r = 1.0 ma t a = 25 c v br 100 (minimum) - v instantaneous forward voltage per diode i f = 5 a t a = 25 c v f (1) 0.48 - v i f = 10 a 0.56 - i f = 20 a 0.69 - i f = 25 a 0.76 0.84 i f = 5 a t a = 125 c 0.39 - i f = 10 a 0.50 - i f = 20 a 0.61 - i f = 25 a 0.66 0.74 reverse current per diode v r = 70 v t a = 25 c i r (2) 23 - a t a = 125 c 11 - ma v r = 100 v t a = 25 c - 1000 a t a = 125 c 29 80 ma thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol v50100pw unit typical thermal resistance per diode r ? jc 1.5 c/w per device 0.8 ordering information (example) package preferred p/n unit weight (g) pac kage code base quantity delivery mode to-3pw v50100pw-m3/4w 4.5 4w 30/tube tube ca s e temperature (c) 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 average forwar d current (a) re s i s tive or inductive load 22 0 028 average forward current (a) average power lo ss (w) 24 20 16 12 8 4 20 18 16 14 12 10 8 6 4 2 d = t p /t t p t d = 0.1 d = 0.2 d = 0.3 d = 0.5 d = 0.8 d = 1.0
v50100pw www.vishay.com vishay general semiconductor revision: 20-dec-13 3 document number: 89181 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - typical instantaneous forward characteristics per diode fig. 4 - typical reverse characteristics per diode fig. 5 - typical juncti on capacitance per diode fig. 6 - typical transient thermal impedance per diode package outline dimensions in inches (millimeters) in s tantaneou s forward voltage (v) 0 0.2 0.4 0.6 0.7 0.8 100 10 1 0.1 t a = 150 c t a = 125 c t a = 25 c in s tantaneou s forward current (a) 0.1 0.3 0.5 20 30 40 50 60 70 80 90 100 1 0.1 0.01 0.001 100 10 percent of rated peak rever s e voltage (%) t a = 150 c t a = 125 c t a = 25 c in s tantaneou s rever s e current (ma) 110 100 0.1 rever s e voltage (v) junction cap acitance (p f) 10 000 1000 100 t j = 25 c f = 1.0 mhz v s ig = 50 mv p-p 0.01 0.1 1 10 100 t - pul s e duration ( s ) 10 1 0.1 tran s ient thermal impedance (c/w) to- 3 pw 0.645 (16.38) 0.625 (15.87) 0.323 (8.20) 0.313 (7.95) 0.245 (6.23) 0.225 (5.72) 0.840 (21.34) 0.820 (20.83) 0.170 (4.32) ? 0.146 (3.71) ? 0.136 (3.45) 0.090 (2.29) 0.080 (2.03) 0.131 (3.33) 0.121 (3.07) 0.048 (1.22) 0.044 (1.12) 0.225 (5.72) 0.205 (5.21) 0.565 (14.35) 0.545 (13.84) 0.160 (4.06) 0.140 (3.56) 0.551 (14.00) 0.537 (13.64) 0.077 (1.96) 0.063 (1.60) 0.079 (2.01) 0.065 (1.65) 0.467 (11.86) 0.453 (11.51) 5 ref. both s ide s r0.155 (r3.94) r0.145 (r3.68) 3 ref. 30 ref. 10 typ. both s ide s 3 ref. 3 ref. 0.050 (1.27) 0.175 (4.45) 0.165 (4.19) 0.030 (0.75) 0.020 (0.50) 0.098 (2.50) 0.083 (2.12)
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